Abstract
The real structures of epitaxial CVD films of germanium and diamond have been comparatively analyzed. The influence of the specific features of elastic-stress distribution in two-layer structures on the relaxation processes and dislocation distribution are considered. The influence of inhomogeneous (over thickness) plastic deformation, caused by the motion of dislocations under alternating elastic-stress field, on the formation of residual bending of substrates and films is shown by the example of epitaxial germanium structures. A significant difference in the relaxation processes in CVD films of diamond and germanium (crystallographic analog of diamond) is revealed.
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