Abstract
We discuss species-specific photochemistry in synchrotron radiation (SR)-excited Si crystal growth using disilane. By combining atomic layer epitaxy (ALE) and chemical vapor deposition (CVD), activated either thermally or electronically, we clarify growth kinetics characteristics of the pertinent intermediate species. The microscopic surface morphology of the Si crystal depends on the growth methods. It is controlled by Si-adatom migration which is correlated with the coverage of hydrogen atoms passivating the surface.
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