Species responsible for Si–H 2 bond formation in a-Si:H films deposited using silane high frequency discharges

Abstract

Species responsible for Si–H 2 bond formation in a-Si:H films have been studied by using a cluster-suppressed plasma CVD reactor of a diode configuration. The concentration of Si–H 2 bonds in a-Si:H films linearly decreases with decreasing the volume fraction V f of clusters incorporated into the films, while the density of higher-order silane such as Si 2H 5 and Si 3H 7 correlates little with the bond concentration. The experimental results obtained using the diode configuration motivate us to employ a reactor of triode configuration in order to reduce the V f value. The a-Si:H Schottky solar cell prepared with this configuration has the high initial fill factor FF = 0.60 and high stabilized value after light soaking FF = 0.56.