Species, dose and energy dependence of implant induced transient enhanced diffusion

Abstract

Special test structures which separate implant damage from a buried monitor boron layer were used to observe the transient diffusion associated with implant annealing. The large anomalous diffusion length is independent of implant species but strongly dependent on implant energy. This is modeled by enhanced Frenkel pair recombination along dense cascade damage tracks associated with heavier ions. The enhancement in the buried layer diffusion also depends on the concentration of the buried layer, even below the intrinsic electron concentration. We propose that boron clusters formed by high populations of mobile boron are necessary in order to model transient diffusion effects. >