Abstract
The implant species and dose effects of ion implantation, including crossing the amorphization threshold, on the transient enhanced diffusion (TED) behavior of a boron marker layer in silicon have been studied. It has been found that for lower implant doses, TED is species independent. However, for higher implanted doses, the dependence of TED on species becomes very significant. It has been found that at these higher doses, including amorphizing doses, P implants cause more TED than either Si or As implants. This result is explained based on the fully coupled diffusion mechanism of the impurity dopants where dopants diffuse by temporarily pairing with point defects. Additionally, both point defect clusters and extended defects such as dislocations significantly affect the dopant profile evolution of both the implanted profile and the buried marker layer. By modeling these effects, the experimental results have been simulated and a consistent parameter set has been found to fit the data to a reasonable extent.
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