Abstract
A new type of thin film module, using SrTiO 3 (STO) as thin film metal-insulator-metal (MIM) capacitors was developed. The module consisted of a GaAs heterojunction bipolar transistor (HBT) and aluminum thin film inductors along with STO MIM capacitors. To connect these devices, the most suitable interface condition between aluminum interconnects and the above devices was optimized to achieve good interlayer conducting properties. In optimizing the connection of aluminum interconnects and the platinum electrodes of the STO capacitors, oxygen plasma cleaning was effective to remove the insulating film on the platinum surface. This film was formed when the SiO 2 thru-hole was made by reactive ion etching (RIE) process with CF 4 . As for the connections of aluminum interconnects and thin film inductors, Au/Ti covering of aluminum surface was effective for preventing the surface oxidation of the aluminum inductors.
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