Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs

T Rudenko,J.-P Raskin,V Kilchytska,D Flandre,A Nazarov

doi:10.1007/978-3-642-15868-1_18

Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs

T Rudenko, J.-P Raskin + Show 3 more

https://doi.org/10.1007/978-3-642-15868-1_18

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Publication Date: Jan 1, 2011

Citations: 40

Affiliation: V.E. Lashkaryov Institute of Semiconductor Physics, Université Catholique de Louvain

#Ultra-thin Body #Gate Tunneling Currents + Show 8 more

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Abstract

Ultra-thin body silicon-on-insulator (SOI) MOSFET is considered to be a strong candidate for ultimate scaling of CMOS technologies, because of its excellent suppression of the short-channel effects, even without the use of channel doping. Apart from undoped ultra-thin silicon body, nowadays SOI MOSFETs also feature ultra-thin gate high-k gate dielectrics and thin buried oxides. These innovating features bring about special electrical properties. In this work, we describe some of these properties revealed via the back-gate effects, including special behaviors of interface coupling, transport properties and gate tunneling currents, which may be beneficial for the back-gate control schemes.

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