Abstract
A quasi-hydrodynamic model of a submicrometer field-effect transistor was used to study the effect of the drift-velocity overshoot on the characteristics of drain-current saturation. It is shown that, in submicrometer transistor structures based on many-valley semiconductors, the current saturation is controlled by levelling off of the electron-drift velocity in the channel, with this levelling off being caused by the effective intervalley scattering. It is also shown that the highest electron-drift velocity in the channel is inversely proportional to the transistor gate length.
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