Abstract
AbstractMemristive valence change memory (VCM) cells show a strong non‐linearity in the switching kinetics which is induced by a temperature increase. In this respect, thermal crosstalk can be observed in highly integrated crossbar arrays which may impact the resistance state of adjacent devices. Additionally, due to the thermal capacitance, a VCM cell can remain thermally active after a pulse and thus influence the temperature conditions for a possible subsequent pulse. By using a finite element model of a crossbar array, it is shown that spatio‐temporal thermal correlations can occur and are capable of affecting the resistive state of adjacent cells. This new functional behavior can potentially be used for future neuromorphic computing applications.
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