Abstract
Spatially varied epitaxial growth of CeO2(100) and CeO2(110) regions on Si(100) substrates is attained using electron beam induced orientation selective epitaxial (OSE) growth by reactive magnetron sputtering. The spatially controlled OSE grown samples are made on Si(100) substrates with various electric resistivity values. By X-ray diffraction measurements, we obtain the lateral orientation mapping within the epitaxial layer surfaces and reveal existence of the transition regions in between the above mentioned two orientation areas. The width of the transition regions is clarified to decrease proportionally with the logarithm of underlying Si substrate resistivity. A surface potential distribution model is proposed to explain the results.
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