Abstract
In this work spatially resolved x-ray diffraction (SRXRD) is used to analyze strain in GaSb layers grown by epitaxial lateral overgrowth (ELO) on SiO2-masked (001) GaAs substrates. We show that this heteroepitaxial structure contains local mosaicity in the wing area that cannot be detected by selective etching. While the standard x-ray diffraction measurements only suggest the presence of grain structure of the ELO layer, SRXRD allows examining the microscopic strain distribution in the sample. In particular, size of microblocks and their relative misorientation are determined.
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