Abstract
We have measured the spectra of light emitted from individual single GaAs quantum wells of cleaved (1 1 0) AlGaAs/GaAs heterostructures using the STM (scanning tunneling microscope) tip as a local electron injection source. The cross-sectional STM images of the quantum wells were obtained, and the light emission spectra were measured by locating the STM tip over individual quantum wells of interest. Single emission peaks were observed to shift to the high-energy side with decreasing well width. The peak positions agree with the calculated transition energies for the corresponding well width. The thermalization length of the injected electron was estimated by observing the change in the emission intensity as the tip is moved at different distances from a given well.
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