Abstract
We report spatially-resolved spectroscopic investigations on the effect of annealing a Pt (100Å)/Si interface in the presence of a native silicon oxide layer. Scanning photoelectron microscopy showed a spatially non-uniform growth pattern of PtSi depending on the annealing temperature and annealing time. Pt 4f and Si 2p core-level spectra measured using different photon energies and at different points suggest both in-plane and out-of-plane inhomogeneous growth of PtSi at 773K.
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