Abstract
Transparent and conducting thin films were deposited on soda lime glass by RF magnetron sputtering without intentional substrate heating using an aluminum doped zinc oxide target of 2 inch in diameter. The sheet resistance, film thickness, resistivity, averaged transmittance and energy band gaps were measured with 2 mm spatial resolution for different target-to-substrate distances, discharge pressures and powers. Hall mobility, carrier concentration, SEM and XRD were performed with a 3 mm spatial resolution. The results reveal a very narrow range of parameters that can lead to reasonable resistivity values while the transmittance is much less sensitive and less correlated with the already well-documented negative effects caused by a higher concentration of oxygen negative ions and atomic oxygen at the erosion tracks. A possible route to improve the thin film properties requires the need to reduce the oxygen negative ion energy and investigate the growth mechanism in correlation with spatial distribution of thin film properties and plasma parameters.
Highlights
Transparent and conductive thin films are important for a large number of applications, including but not limited to: touch screens, solar cells, smart windows and light emitting diodes [1,2,3,4,5]
Cost effective solar cells based on Cu (In,Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) absorbers have been fabricated with a TCO based on AZO [6,7]
The main point of this work is the optoelectronic characterization of the deposited films with a spatial resolution of 2–3 mm, which reveals the importance of trying to understand the growth mechanism by a careful examination of the entire spatial distribution of both the thin film and plasma parameters
Summary
Transparent and conductive thin films are important for a large number of applications, including but not limited to: touch screens, solar cells, smart windows (low-e, chromogenic devices) and light emitting diodes [1,2,3,4,5]. The deep film thickness near r = 0 mm is caused by re‐sputtering on the substrate, with no measurable values for powers aNbaonovmeate2r0ialsW20.20T,h10e, 1s4heet resistance, Hall mobility, carrier concentration, resistivity and aver6aogfe1d1 tNraannosmmateirtitaalsn2c0e20f,o1r0,d1a4ta points in Figure 8 at r = 24 mm are presented in Table 1 and show the lo6woef s11t raerseisptirveisteynotefd5.i4n5F×ig1u0r−4eΩ7cwmi,th17a.3n cemvi2d/Venstfocor rmreolabtiiloitny,w6i.6th t×h1e0e20rocsmio−3nfotrracckarsraienrdcoanlscoenshtroawtioinngatnhde 8h8ig%hfeosrt vavaleureasge(adbtorvaens3m.4iettVa)nacte.thSeucsahmvealluoecsatairoenisnwdeitehdlovwereystgroeosdisftoivritsyevvearlauleaspapnldichatigiohnesstthmaot bnieleitdy ThanCigdOhec’sastrwrviiaethlrucmeosno(cdaeebnroatvrtaeet3ipo.r4noe.pVe)rtaiet st,hienscalumdeinlogclaotwionesmwisisthivliotywwesitnrdeoswistsi.vity values and highest mobility and cTahrreiesrpcaotinaclednitsrtartibiount.ion of the (a) sheet resistance and (b) film thickens is presented in Figure 8 for different discharge powers at 1.4 mTorr, Z = 35 mm and 60 min deposition time. The sheet resistance, Hall mobility, carrier concentration, resistivity and averaged transmittance for data points in Figure 8 at r = 24 mm are presented in Table 1 and show the lowest resistivity of 5.45 × 10−4 Ωcm, 17.3 cm2/Vs for mobility, 6.63 × 1020 cm−3 for carrier concentration and 88% for averaged transmittance Such values are very good for several applications that need TCO’s with moderate properties, including low emissivity windows.
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