Abstract
Spatially resolved mass spectrometry investigations on a reactive plasma jet are presented. The jet is created by a low-power 2.45 GHz microwave-driven plasma source inside a process chamber. The working pressure adjusted by N2 inlet into the process chamber ranges from 50–100 mbar. The plasma is fed by argon and SF6 gas flows using a coaxial nozzle with a central tube for argon and the outer ring-shaped nozzle for SF6. With this configuration, it is possible to maintain a stable reactive plasma jet producing SFx (x=1…5) radicals and free fluorine radicals for locally acting high rate etching techniques for Si-based materials like Si, SiC, and SiO2.
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