Abstract
For a complex semiconductor alloy like Cu${}_{2}$ZnSnSe${}_{4}$, an emerging photovoltaic absorber, samples prepared by different techniques may yield comparable efficiencies and appear similar when probed by conventional techniques, yet may actually be rather different at the microscopic scale. In this study, laser-induced modification spectroscopy with high spatial resolution and high-temperature capability is shown to be a simple, effective tool to reveal microscopic structural variations. This promotes the investigation and screening of complex semiconductors, to assess the potentials of various technological pathways.
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