Spatially resolved defects parameters of the D1 dislocation center in silicon using temperature- and injection-dependent hyperspectral photoluminescence mapping

Abstract

The sub-bandgap photoluminescence (PL) arising from dislocations in crystalline silicon (known as “D-lines”) has been studied for over half a century. However, many properties of the D-lines such as the defect parameters and the underlying recombination mechanism are poorly understood. In this study, we perform both temperature-dependent and injection-dependent hyperspectral mapping and apply this to a cast-mono silicon sample held at room-temperature and above. We parameterize the energy levels and defect densities of the D-lines in this sample. We also demonstrate for the first time that the D1 line in silicon wafers originates from the donor–acceptor pair recombination mechanism.