Abstract
Spatially resolved room temperature photoluminescence is a non-destructive optical characterisation technique which allows the measurement of relevant epitaxial layer properties over the whole wafer. In this work the authors describe application of spatially resolved and spectrally resolved photoluminescence mapping to determine the spatial variation of the composition of ternary epitaxial layers growth by MOCVD and MBE. They show results from device-quality epitaxial layers which are used for the manufacturing of optoelectronic devices. In particular they concentrate on InGaAs layers deposited on InP substrates and AlGaAs layer deposited on GaAs substrates. The authors discuss some of the suspected mechanisms for these variations and the use of the technique as a diagnostic aid for MOCVD and MBE growth.
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