Abstract
We have observed a large excitonic linewidth broadening at low temperatures in growth-interrupted asymmetric-coupled quantum wells as irradiance increases. We attribute this broadening to the decrease of the exciton binding energy due to spatially-localized band-gap renormalization. We have also observed the stepwise saturation of the photoluminescence emission peaks as irradiance increases in growth-interrupted asymmetric-coupled quantum wells with various structures and doping profiles. We attribute this saturation to the result of spatially-localized band-filling effects. Based on the time-resolved photoluminescence measurements, we have determined the nature of the recombination processes and the exciton densities. In both undoped and modulation-doped samples, the small interface island area as a result of growth-interruption allows us to generate large carrier density in the islands; both band-gap renormalization and band-filling effects become stronger even at low irradiances. In compensation-doped asymmetric-coupled quantum wells, we observed anomalously large blue shift of donor-acceptor pair transition energy as the laser intensity increases.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Nonlinear Optical Physics & Materials
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
