Abstract
We report a new approach to produce high quality epitaxial graphene based on the concept of controlling Si sublimation rate from SiC surface. By putting a mask substrate to suppress Si sublimation from the SiC surface in ultrahigh vacuum, epitaxial graphene growth at 4H-SiC (0001) was locally controlled. Spatially graded surface graphitization was confirmed in a scanning electron microscopy contrast from the outside unmasked region to the inside masked region. The contrast was discussed with Raman characterization as the increase of graphene thickness and the surface compositional change of SiC. Results indicate two types of growth processes of epitaxial graphene at 4H-SiC (0001) step-terrace structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
