Abstract
Electrons and photoexcited holes are separated into adjacent quantum wires in remote doped GaAs/AlGaAs quantum wells, using a shallow etching technique. This spatial separation results in a drastic change of the photoluminescence lineshape and an additional, broad feature shifted up to 30 meV below the luminescence energy of the unstructured sample. The two relevant recombination processes are shown to be due to spatially direct and indirect transitions, respectively. A variation of the temperature indicates, that both plasma-like and exciton-like recombinations contribute to the spatially direct luminescence.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
