Abstract
The atom-photon entanglement using the Laguerre-Gaussian (LG) beams is studied in the closed-loop three-level V-type quantum systems. We consider two schemes with near-degenerate and non-degenerate upper levels: in the first, the effect of the quantum interference due to the spontaneous emission is taken into account and in the second, a microwave plane wave is applied to the upper levels transition. It is shown that the atom-photon entanglement in both schemes depends on the intensity profile as well as the orbital angular momentum (OAM) of the applied fields so that the various spatially dependent entanglement patterns can be generated by Laguerre-Gaussian beams with different OAMs. However, due to the zero intensity,no entanglement appears in the center of the optical vortex beams. As a result, the entanglement between dressed atom and its spontaneous emissions in different points of the atomic vapor cell can be controlled by the OAM of the applied fields. Moreover, our numerical results show that the number of the local maximum degree of entanglement (DEM) peaks depends on the OAM of the applied fields. The degrees of freedom for OAM play a crucial role in spatially dependent atom-photon entanglement in such a way that it may possess broad applications in high-dimensional quantum information processing and data storage.
Highlights
The atom-photon entanglement using the Laguerre-Gaussian (LG) beams is studied in the closedloop three-level V-type quantum systems
The angular momentum carried by light can be distinguished by the spin angular momentum associated with circular polarization[9] and the orbital angular momentum (OAM) associated with the spatial distribution of the wavefront
We investigated the steady-state behavior of the degree of entanglement (DEM) in a three-level V type atomic system with the SGC effect under the multi-photon resonance condition
Summary
An entangled quantum system consisting of two subsystems, A and B, is described by the reduced density matrix. We consider different intensity profiles, i.e., Gaussian and LG modes for the applied fields and investigate steady-state behavior of the DEM in different points of atomic vapor cell. It is shown that the maximal entanglement can be obtained in different regions of atomic vapor cell by applying a planar microwave field instead of the SGC effect. Other 21 planes in Fig. 8 show the DEM behavior in different points of the atomic vapor cell for different choices of OAM of two applied fields.
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