Abstract
Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO) thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 – 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002) axis.
Highlights
Transparent conductive oxide (TCO) films[1,2,3,4,5,6,7,8,9] are widely utilized as an electrode in information display and photovotative cell
We have proposed a novel radio frequency (RF) sputtering system that facing cylindrical Al-doped Zinc Oxide (AZO) targets with two different diameters are mounted in a ring-shaped hollow electrode without external substrate heating
The RF ring-shaped magnetized discharge sputtering plasma has been developed for uniform profile of high conductive Al-doped ZnO films
Summary
Transparent conductive oxide (TCO) films[1,2,3,4,5,6,7,8,9] are widely utilized as an electrode in information display and photovotative cell. Indium tin oxide (ITO) films are the promising TCO materials whose resistivity and transparence are 0.44 – 5 ×10-4 Ωcm and 85 %, respectively[2,3,10,11,12,13] so that mainly practiced as the electrode. In order to solve this problem, Al-doped Zinc Oxide (AZO) films are expected as the generation materials. This is because the material cost of AZO films is lower than that of ITO films and the resistivity and transparence of AZO films are attained at 1.9 – 5.1×10-4 Ωcm and 85 %, respectively with substrate heating of 350 °C.6,14,15. These TCO films are principally synthesized by magnetron plasma sputtering with remarkably non-uniform plasma density profile.[14,16,17,18,19,20,21,22] spatial profile of the resistivity of TCO films is not uniform under no substrate-heating or low substrate-temperature less than 300 °C.6,14,15,23 It is caused that negative ions and high-speed sputtered particles emitted by the target due to incident highdensity positive ions damage the deposited TCO films.[17,18,24,25,26] It is difficult to use the magnetron plasma sputtering for lower melting point material as a flexible sheet, it overcomes the problem by a high-temperature operation higher than 350 °C.15,27
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
