Abstract
We present theoretical and experimental investigations of current filaments in thin n-GaAs films in the regime of low-temperature impurity breakdown. Simulations combining a Monte Carlo approach for the scattering and generation - recombination processes with a drift-diffusion model on a two-dimensional spatial domain yield detailed information about the distribution of the electron densities, electron temperature, current density and electric field. The theory is confirmed by spatially resolved measurements using a novel technique of quenched photoluminescence.
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