Abstract
Results are reported from beam test measurements of one of the first commercial prototype gallium arsenide microstrip detectors. The detector consisted of 128 strips on a 50 μm pitch, with a wafer thickness of 200 μm. Operating at a bias of 180 V, the detector produced a signal to noise ratio of 19 to 1, with a particle detection efficiency of better than 99%. The spatial resolution of the detector was measured as 14.6 μm without charge sharing effects. Charge sharing between pairs of strips was seen to improve the spatial resolution, with an average value for all events of 10.4 μm.
Highlights
The development of gallium arsenide (GaAs) microstrip detectors has been actively pursued for use as radiation hard tracking detectors for ATLAS at the Large Hadron Collider (LHC) at CERN [1]
Recent activity to develop GaAs microstrip detectors has concentrated on the use of semi-insulating (SI) GaAs which is a compensated semiconductor with a high resistivity and which is readily available in wafers of suitable thickness
Due to the presence of charge traps in this material, the EL2 trap at mid band gap, such devices have a charge collection efficiency which is less than 100% and which decreases with increasing wafer thickness
Summary
The development of gallium arsenide (GaAs) microstrip detectors has been actively pursued for use as radiation hard tracking detectors for ATLAS at the Large Hadron Collider (LHC) at CERN [1]. Such devices are very similar in their design and operation to the more usual silicon microstrip detectors, but have some unique characteristics due to the inherent properties of GaAs. Recent activity to develop GaAs microstrip detectors has concentrated on the use of semi-insulating (SI) GaAs which is a compensated semiconductor with a high resistivity (typically 107 Ωcm) and which is readily available in wafers of suitable thickness (typically 200-500μm). This allowed charge sharing between strips and any corresponding effect on the detector resolution to be investigated
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