Abstract
This paper reports recent advances in the study of Frequency domain optical storage (FDOS) based on the photochemical hole-burning (PHB) method. New PHB systems are introduced which operate in the near IR regime and are suitable for the use of semiconductor lasers. Furthermore experiments to determine the spatial resolution of the method are presented. Future applications will also be discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
