Abstract
A simple analytical model for the longitudinal distributions of photon and carrier densities in edge-emitting semiconductor lasers significantly above threshold is presented. It is shown that under the conditions considered, the shape of these distributions does not depend on pumping current. Good agreement with previous numerical and seminumerical investigations is obtained. It is shown that any direct effect of longitudinal spatial hole burning on the output power is seen only at very low output mirror reflectances and even then is weak, implying that the main effects of longitudinal nonuniformity are indirect ones, through carrier leakage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
