Abstract
We present a microscopic analysis of the spatial correlation between local diffusion noise sources in homogeneous GaAs. The calculations are performed by using an ensemble Monte Carlo simulation. The spatial extent of the correlations is determined for different applied electric fields. It is confirmed that the space correlations do exist over short distances, ranging from 0.1 to 0.6 μm depending on the electric field. This correlation length is much longer in GaAs than in Si. It is shown that the diffusion coefficient can be decomposed into the contribution of cross-correlations between close cells inside a homogenous sample. Under far-from-equilibrium conditions, the forward correlations at low frequency are found to be spatially shorter than those with the backward positions due to the effect of the randomizing scattering mechanisms.
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