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Abstract
A modified model of injection and thermal processes is proposed for the description of spatial dynamics of pulsed current overload in ultra-high-power silicon switches. The results of numerical analysis demonstrate an unusual phenomenon of dynamic depletion of plasma density in a narrow layer of the injection channel with anomalously high electric field and heat evolution. This layer is observed when the current density increases above several kA/cm2 and temperature gradients on the order of ∼5 × 105 K/cm develop. The moment of absolute minimum in the plasma density coincides with the appearance of a sharp peak on the transient voltage characteristics, which is a precursor of irreversible thermal breakdown.
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