Abstract
The in-plane spatial distribution of photoluminescence (PL) intensity in two-dimensional layers of a type-II (buffer Si1-yGey)/tSi/sSi1-xGex/tSi/(cap Si1-yGey) heterostructure is investigated at liquid-helium temperatures at high excitation levels. It is found that the PL spectra recorded at the excitation spot and the edge of the sample are different. This work examines the dependences of the PL spectra and intensity both on the distance between the observation point and a fixed excitation spot and on the distance between the excitation spot and a fixed observation point at the edge of the sample. The reasons for the observed behavior of the PL are determined.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
