Spatial Distribution of the High-Density Microwave Plasma and Its Effect on Crystal Silicon Film Growth

Abstract

The spatial distribution of the high-density and low-temperature microwave plasma and its effect on the fast deposition of highly crystallized microcrystalline silicon (µc-Si:H) film are demonstrated through systematic deposition and plasma diagnostics studies. The best film crystallinity is obtained under the condition in which the hot electron population and the distribution of the ion beam energy impinging on the growing surface are minimum. The intentional control of the ion beam energy is also attempted using a mesh grid electrode to suppress the ion bombardment during film growth. A low and uniform ion beam energy is effective in promoting the film crystallinity with less surface roughness and bulk inhomogeneities.