Abstract
The spatial distribution of impurity defect centers in Fe-doped chemical vapor deposited (CVD) ZnSe has been studied by two-photon confocal microscopy and scanning Fourier transform spectroscopy using an IR microscope. It has been shown that, as a result of doping with Fe, CVD ZnSe contains regions hundreds of microns in size that are parallel to the doping plane and differ in luminescence characteristics. The characteristics of these regions have been shown to correlate with the concentration of optically active Fe. Our results can be interpreted in terms of a model that assumes codiffusion of Fe and two types of impurity defect centers. We have pointed out that the data obtained in this study should be taken into account in interpreting results on the photoluminescence of semiconductors doped via thermal diffusion.
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