Abstract
We report measurements of concentrations and spatial distributions of defects, defect clusters, and surface metal arising from low-energy electron bombardment of LiF crystals. The method employed to monitor defect concentration as a function of depth uses optical transmission spectroscopy in conjunction with depth-profile techniques. Investigations at -90 \ifmmode^\circ\else\textdegree\fi{}C indicate that the observed spatial distribution of defects can be explained best by long-range diffusion of hot holes.
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