Abstract
GaNAs crystals grown by the metalorganic vapor-phase epitaxy (MOVPE) method are characterized by plane-view electron beam induced current (EBIC) and deep-level transient spectroscopy (DLTS). Localized deep-level traps with a diameter of 3–5 μm are clearly observed from EBIC analysis. The DLTS analysis shows that the dominant deep-level traps have energy levels of E v+0.58 eV and E c−0.72 eV. Such deep level traps are eliminated by annealing at 700°C. From our analysis, the change in the spatial distribution of deep-level traps due to annealing correlates strongly with the change in the PL intensity, indicating that observed deep-level traps are one of the major factors which degrade the optical properties of the GaNAs crystals. In addition to these localized traps, the inhomogeneity of minority diffusion length is also detected by EBIC.
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