Abstract
UV irradiation of Si MOSFET's with non-transparent poly-Si gates leads to a specific spatial distribution of oxide and interface damage, which we show to be limited to the area below the periphery of the gate area. The combined measurement of drain, substrate and charge pumping currents allows a distinction to be made between charge build-up at the edges in the length (adjacent to source and drain) and width (at the LOCOS edge) dimensions. Furthermore we present the energetic distribution of interface states in the damaged region in comparison with the undamaged region as obtained by charge pumping measurements.
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