Abstract
In this article, a spatial-dependent evaluation method is presented in order to visualize the changing behavior of several parameters such as temperature and electrical potential in semiconductor materials. If well-known experimental standard methods enable solid measurements and results, space-dependent simulations enable a good step-by-step follow-up of the mechanisms. The original combination of three complementary methods (analytical, numerical and experimental) is presented here as a whole package to extract the Seebeck coefficient of Germanium for small temperature variations above room temperature. An experimental negative temperature effect on the Seebeck coefficient for n-type Ge was successfully interpreted by the influence of minority carriers at low doping level, showing by the way some limitations of the analytical and numerical model.
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