Abstract

Gallium doped zinc oxide was ablated using the third harmonics of Nd:YAG laser at various laser fluences and nitrous oxide ambient gas pressures. Optical emission spectroscopic technique was used to determine the plasma parameters. Spatial variation of electron number density (Ne) was determined along the direction normal to the target surface. The electron density obtained was of the order of 1017 cm−3, for the laser fluence in the range of 1.27–6.35 J cm−2. The influence of the substrate temperature on the plasma plume was studied by keeping an Al2O3 (alumina) substrate at a distance of 5 cm distance from the target at various temperatures. The increase in the substrate temperature enhanced the electron number density and intensity of spectral emissions of various species in the plume. The time of flight transients of specific emissions from the plume were recorded. The velocity of neutral gallium decreased from 6.45 to 3.87 km/s at 4 mm distance from the target when the ambient gas pressure was increased from 0.0001 to 0.1 mbar. The velocities of the species increased considerably with an increase in laser fluences. ZnO thin films were deposited on alumina substrates. The plasma plume kinematics were used to corroborate the nature of thin film deposition.

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