Abstract
The spatial variations of the structural, optical and electrical properties of Cu2ZnSnSe4 thin films grown by radio-frequency (RF) magnetron sputtering across a distance of 60 mm were investigated as a function of the discharge power. Noticeable changes in the deposition rate and elemental distribution were observed in the as-deposited films at the central and near-edge regions. After annealing in a Se atmosphere, the dependence of the phase evolution and electrical properties on the spatial position and power was also evident. Deposition at a low power of 30 W seems to be more promising in generating dominant Cu2ZnSnSe4 phase with well-packed crystallites on the surface. On the other hand, deposition at higher power tended to result in a significant portion of a secondary SnSe2 phase, which is responsible for the higher optical band gap and lower electrical resistivity, depending on the specific region of the film.
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