Abstract
Single-carrier traps in a GaAs/Al x Ga 1− x As heterostructure are spatially and energetically visualized by observing random telegraph signals (RTSs) which are caused by the traps. Since RTSs are only observed when the traps locate close vicinity to a narrow conducting channel, a one-dimensional (1D) channel in a split gate device is used as a probe of traps. Shifting the 1D channel spatially and energetically by independent control of the voltage applied to each part of the split gate, positions of traps are succesfully mapped in the space versus energy plane.
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