Abstract
Spatial and dynamical properties of optical phonons in Al x Ga 1− x As alloys and GaAs/Al x Ga 1− x As quantum wells are studied. An isotopically disordered harmonic crystal model is developed to study spatial properties of optical phonons in Al x Ga 1− x As alloys. In the GaAs/Al x Ga 1− x As system, transmission of the GaAs optical phonons through an Al x Ga 1− x As barrier is studied using three-dimensional lattice dynamical model, fully accounting for the random arrangement of Ga and Al atoms in the alloy barrier. In the Al x Ga 1− x As alloy, a localized-to-extended transition is found as a function of x. In GaAs/Al x Ga 1− x As quantum wells, the transmission coefficient of the GaAs LO phonons through the alloy barrier remains significant below x < 0.3. These results are in good qualitative agreement with the experimentally deduced coherence length of LO phonons from nonequilibrium hot phonon populations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
