Space radiation induced failure rate calculation method using energy deposition probability function for high-voltage semiconductor device

Abstract

With the development of modern space technology, it is necessary to use onboard high voltage power systems to supply increased electric power demand. High-voltage semiconductor devices are the critical components in the system. According to the increase in the power system bus voltage, malfunction of high voltage power semiconductor devices due to space radiation becomes the most critical issue for designing the system. What we need to reduce the risk is failure rate calculation for the high-voltage semiconductors used in the system and selecting appropriate devices and the bus voltage. This risk can be reduced by calculating the probability of damage caused by space radiation for high-voltage semiconductor devices. In this study, the energy deposition probability function of a silicon semiconductor device has been developed in a more comprehensive way using the Geant4 simulation toolkit. This method makes it possible to calculate the safe operating voltage of any semiconductor device in space depending on the shape, size, applied voltage, doping concentration, and space radiation flux. Furthermore, using this comprehensive method for defining the safe threshold applied voltage of a high-voltage PiN diode of spacecraft in low earth orbit and compared it to a reference. Data availabilityThe raw/processed data required to reproduce these findings cannot be shared at this time as the data also forms part of an ongoing study.