Abstract
Scattering mechanisms in undoped n-type indium monoselenide have been studied in the temperature range between 80 and 400 K. The experimental data were obtained from Hall and photo-Hall effects. It is shown that in the samples with low room temperature Hall mobility (μH = 600 to 750 cm2/Vs) the temperature dependence of μH(T) can be explained by electron scattering on charged impurity aggregates surrounded by space-charge regions. Under illumination the neutralization of the effective charge of impurity aggregates by photo-excited carriers is the reason for the predominant electron scattering on homopolar optical phonons A′1g.
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