Abstract
The small-signal impedance is derived for a double-injection structure operating in the low-injection square-law regime. Space-charge effects are found to be essential. Spontaneous voltage oscillations are found to occur above a threshold voltage Vth. The theory gives quantitative agreement with experimental results for Au-doped Si p-i-n diodes. These include the temperature dependence of Vth and the threshold frequency as well as the voltage dependence of the frequency above threshold.
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