Abstract
A theory which is presented for handling one carrier space-charge-limited effects in thin, compensated high-resistivity layers, includes both the voltage drop across a high resistivity region and a π junction. Good agreement is obtained between the theory and the measured I– V characteristics of Cu-compensated CdS. A trapping energy state 0·37 eV below the CdS conduction band and of density 1∼2×10 15 cm −3 is identified.
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