Abstract
The system of partial differential equations which describes the motion of charge carriers inside the space charge region of an inversely biased p-n junction is numerically solved, taking into account the influence of the density of electron-hole pairs on the electric field.It is shown that there are remarkable variations in the theoretically predicted current signals when the density is raised. Particularly interesting is the appearance of a peak closely resembling the one predicted by the theory of SCL currents in insulators. The time position of the above mentioned peak is not influenced by diffusion (at least when a realistic order of magnitude is considered for the diffusion term).These theoretical previsions could be very useful in the study of charge transport in semiconductors at low fields.
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