Abstract
Electrical conductivity measurements are made at various fixed temperatures on evaporated films of pentacene deposited at different substrate temperatures. Analysis of the resulting SCL-currents enables to determine both the trapping levels and trap densities. The density of traps is shown to increase exponentially with decreasing substrate temperature. The possible origin of the trapping centres in the pentacene films is discussed. Des mesures de conductivite electrique on ete effectuees a plusierus temperatures sur des couches minces de pentacene deposees par evaporation sur des supports portes a differentes temperatures. L'analyse des resultats de courants limites par la charge d'espace permet de determiner a la fois le niveau des pieges et leur densite. On constate que la densite de pieges croit exponentiellement lorsque la temperature du support sur lequel est effectuee l'evaporation decroit. L'origine possible des centres de piege dans les couches minces de pentacene est discutee.
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