Abstract
It is established that charge carrier (hole) transport in the Al-Se95As5〈EuF3〉-Te structure is effected by unipolar injection currents limited by space charges with the involvement of two capture trap groups. Shallow traps corresponding to charged intrinsic defects C1− are related to broken selenium bonds. Deep traps corresponding to charged intrinsic defects P2− are formed by arsenic atoms with broken coordination. It is shown that the EuF3 impurity strongly affects the concentration of the capture traps, especially those localized near the Fermi level.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
