Abstract
Space charge limited currents (SCLC) were observed on diamond surfaces that were damaged by mega-electron volt (MeV) ion implantations. The current-voltage plots display an exponential behavior with a fitting constant α, whose value was found to increase with thermal annealing temperatures up to 600oC. Comparisons among the surface areas implanted with different ion fluences indicate that there exists a damage threshold, above which the SCLC occur, and below which Ohmic conduction dominates. Raman spectroscopy studies confirm that the measured conductance originates from the vacancies created in the shallow surface layers, in agreement with Baskin's model [1]; furthermore, the spectra show that the trapped space charges could be related to the interstitials in the surface layers, which may form a localized field in opposition to the drift current flow.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
