Abstract
We present a model of the space charge limited (SCL) electron injection into a gap combined with trap-filled dielectric solid and vacuum or a gap combined with two different trap-filled dielectric solid. An optimized calculation method is proposed to calculate the SCL current density J inside the gap under different gap voltages V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> . The n scaling of J- V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</sup> varies in a different range of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> , which is described as the Ohm regime, trap-limited regime, and SCL regime. It is found that the n scaling is dependent on electron mobility and relative length scale between two media, which indicates that traps in the dielectric have a profound impact on SCL electron transport properties.
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