Space charge formation in polyimide films and polyimide/SiO2 double-layer measured by LIMM

Abstract

For Polyimides (PI) used as insulating inter-layers or passivation layers in microelectronics and power electronics, reliability and failure mechanisms are intimately linked to phenomena such as non-linear conduction, distortion of field distribution and electrical ageing that have all some relation to space charge processes. Knowledge about these space charge distributions is therefore of importance to optimize structures and designs involving PIs. However, in the thickness scale of interest for such applications, of the order of 10 μm, no results were reported for PI, and only scarce studies for other materials. Space charge measurements carried out on PI using the laser intensity modulation method (LIMM) are reported in this work. PI-containing metal-insulator-semiconductor structures were pre-stressed under DC fields up to 2 MV/cm. The impact of the doping type of the substrate (either n-type or, p-type silicon) has been evaluated to address the mechanisms of space charge formation. The nature of electrode substrate substantially impacts the measured charge amount and charge nature, pointing towards charge injection as the origin of space charge build-up. The interpretation is substantiated by results obtained using a SiO2 layer as a barrier against electronic injection from the substrate into the PI layer.